Diodes Incorporated

ZXMHC10A07N8TC

Descripción :
MOSFET 2N/2P-CH 100V 8-SOIC
Paquete :
8-SOP
Current - Continuous Drain (Id) @ 25°C :
800mA,680mA
Drain to Source Voltage (Vdss) :
100V
FET Feature :
Standard
FET Type :
2 N and 2 P-Channel (H-Bridge)
Gate Charge (Qg) (Max) @ Vgs :
2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
138pF @ 60V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-SOIC (0.154",3.90mm Width)
Packaging :
-
Power - Max :
870mW
Rds On (Max) @ Id,Vgs :
700 mOhm @ 1.5A,10V
Series :
-
Supplier Device Package :
8-SOP
Vgs(th) (Max) @ Id :
4V @ 250μA

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