Diodes Incorporated

ZXMHC10A07T8TA

Descripción :
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
Paquete :
SM8
Current - Continuous Drain (Id) @ 25°C :
1A,800mA
Drain to Source Voltage (Vdss) :
100V
FET Feature :
Standard
FET Type :
2 N and 2 P-Channel (H-Bridge)
Gate Charge (Qg) (Max) @ Vgs :
2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
138pF @ 60V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
SOT-223-8
Packaging :
Cut Tape (CT)
Power - Max :
1.3W
Rds On (Max) @ Id,Vgs :
700 mOhm @ 1.5A,10V
Series :
-
Supplier Device Package :
SM8
Vgs(th) (Max) @ Id :
4V @ 250μA

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