VQ1001P

Descripción :
MOSFET 4N-CH 30V 0.83A 14DIP
Paquete :
14-DIP
Current - Continuous Drain (Id) @ 25°C :
830mA
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
4 N-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
110pF @ 15V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
-
Packaging :
Tube
Power - Max :
2W
Rds On (Max) @ Id,Vgs :
1.75 Ohm @ 200mA,5V
Series :
-
Supplier Device Package :
14-DIP
Vgs(th) (Max) @ Id :
2.5V @ 1mA

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