VQ1001P
- Descripción :
- MOSFET 4N-CH 30V 0.83A 14DIP
- Paquete :
- 14-DIP
- Esta parte cumple con RoHS
- Hoja de datos (1)
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- Current - Continuous Drain (Id) @ 25°C :
- 830mA
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 4 N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 110pF @ 15V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- -
- Packaging :
- Tube
- Power - Max :
- 2W
- Rds On (Max) @ Id,Vgs :
- 1.75 Ohm @ 200mA,5V
- Series :
- -
- Supplier Device Package :
- 14-DIP
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA