Vishay Semiconductor Diodes Division

ES07B-GS18

Descripción :
DIODE GEN PURP 100V 1.2A DO219AB
Paquete :
DO-219AB (SMF)
Capacitance @ Vr,F :
4pF @ 4V,50MHz
Current - Average Rectified (Io) :
1.2A
Current - Reverse Leakage @ Vr :
10μA @ 100V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-219AB
Packaging :
Cut Tape (CT)
Reverse Recovery Time (trr) :
25ns
Series :
-
Speed :
Fast Recovery =< 500ns,> 200mA (Io)
Supplier Device Package :
DO-219AB (SMF)
Voltage - DC Reverse (Vr) (Max) :
100V
Voltage - Forward (Vf) (Max) @ If :
980mV @ 1A

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