Toshiba Semiconductor and Storage

2SB906-Y(TE16L1,NQ

Descripción :
TRANS PNP 60V 3A PW-MOLD
Paquete :
PW-MOLD
Current - Collector (Ic) (Max) :
3A
Current - Collector Cutoff (Max) :
100μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic,Vce :
100 @ 500mA,5V
Frequency - Transition :
9MHz
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
TO-252-3,DPak (2 Leads + Tab),SC-63
Packaging :
Cut Tape (CT)
Power - Max :
1W
Series :
-
Supplier Device Package :
PW-MOLD
Transistor Type :
PNP
Vce Saturation (Max) @ Ib,Ic :
1.7V @ 300mA,3A
Voltage - Collector Emitter Breakdown (Max) :
60V

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