Toshiba Semiconductor and Storage

2SA965-O(TE6,F,M)

Descripción :
TRANS PNP 800MA 120V TO226-3
Paquete :
LSTM
Current - Collector (Ic) (Max) :
800mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic,Vce :
80 @ 100mA,5V
Frequency - Transition :
120MHz
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
TO-226-3,TO-92-3 Long Body
Packaging :
Bulk
Power - Max :
900mW
Series :
-
Supplier Device Package :
LSTM
Transistor Type :
PNP
Vce Saturation (Max) @ Ib,Ic :
1V @ 50mA,500mA
Voltage - Collector Emitter Breakdown (Max) :
120V

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