STS10DN3LH5
- Descripción :
- MOSFET 2N-CH 30V 10A 8-SOIC
- Paquete :
- 8-SO
- Esta parte cumple con RoHS
- Hoja de datos (1)
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- Current - Continuous Drain (Id) @ 25°C :
- 10A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 4.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 475pF @ 25V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-SOIC (0.154",3.90mm Width)
- Packaging :
- Cut Tape (CT)
- Power - Max :
- 2.5W
- Rds On (Max) @ Id,Vgs :
- 21 mOhm @ 5A,10V
- Series :
- STripFET V
- Supplier Device Package :
- 8-SO
- Vgs(th) (Max) @ Id :
- 1V @ 250μA