ROHM Semiconductor

EM6K1T2R

Descripción :
MOSFET 2N-CH 30V .1A EMT6
Paquete :
EMT6
Current - Continuous Drain (Id) @ 25°C :
100mA
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
13pF @ 5V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
SOT-563,SOT-666
Packaging :
Tape & Reel (TR)
Power - Max :
150mW
Rds On (Max) @ Id,Vgs :
8 Ohm @ 10mA,4V
Series :
-
Supplier Device Package :
EMT6
Vgs(th) (Max) @ Id :
1.5V @ 100μA

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