QJD1210SA2
- Descripción :
- MOSFET 2N-CH 1200V 100A SIC
- Paquete :
- Module
- Esta parte cumple con RoHS
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- Current - Continuous Drain (Id) @ 25°C :
- 100A
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8200pF @ 10V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Packaging :
- Bulk
- Power - Max :
- 415W
- Rds On (Max) @ Id,Vgs :
- 17 mOhm @ 100A,15V
- Series :
- -
- Supplier Device Package :
- Module
- Vgs(th) (Max) @ Id :
- 1.6V @ 34mA