QJD1210SA1

Descripción :
MOSFET 2N-CH 1200V 100A SIC
Paquete :
Module
Current - Continuous Drain (Id) @ 25°C :
100A
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
FET Feature :
Standard
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
330nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds :
8200pF @ 10V
Mounting Type :
Chassis Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
Module
Packaging :
Bulk
Power - Max :
520W
Rds On (Max) @ Id,Vgs :
17 mOhm @ 100A,15V
Series :
-
Supplier Device Package :
Module
Vgs(th) (Max) @ Id :
1.6V @ 34mA

Productos similares