QJD1210011

Current - Continuous Drain (Id) @ 25°C :

100A

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

500nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds :

10200pF @ 800V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

Module

Packaging :

Bulk

Power - Max :

900W

Rds On (Max) @ Id，Vgs :

25 mOhm @ 100A，20V

Series :

-

Supplier Device Package :

Module

Vgs(th) (Max) @ Id :

5V @ 10mA