ON Semiconductor

2SB1216S-E

Descripción :
TRANS PNP 100V 4A TP
Paquete :
TP
Current - Collector (Ic) (Max) :
4A
Current - Collector Cutoff (Max) :
1μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic,Vce :
140 @ 500mA,5V
Frequency - Transition :
130MHz
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
TO-251-3 Short Leads,IPak,TO-251AA
Packaging :
Bulk
Power - Max :
1W
Series :
-
Supplier Device Package :
TP
Transistor Type :
PNP
Vce Saturation (Max) @ Ib,Ic :
500mV @ 200mA,2A
Voltage - Collector Emitter Breakdown (Max) :
100V

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