Nexperia USA Inc.

NX1029X,115

Descripción :
MOSFET N/P-CH 60V/50V SOT666
Paquete :
SOT-666
Current - Continuous Drain (Id) @ 25°C :
330mA,170mA
Drain to Source Voltage (Vdss) :
60V,50V
FET Feature :
Logic Level Gate
FET Type :
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs :
0.35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
36pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
SOT-563,SOT-666
Packaging :
-
Power - Max :
500mW
Rds On (Max) @ Id,Vgs :
7.5 Ohm @ 100mA,10V
Series :
Automotive,AEC-Q101,TrenchMOS
Supplier Device Package :
SOT-666
Vgs(th) (Max) @ Id :
2.1V @ 250μA

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