LN60A01EP-LF

Descripción :
MOSFET 3N-CH 600V 0.08A 8DIP
Paquete :
8-PDIP
Current - Continuous Drain (Id) @ 25°C :
80mA
Drain to Source Voltage (Vdss) :
600V
FET Feature :
Standard
FET Type :
3 N-Channel,Common Gate
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Through Hole
Operating Temperature :
-20°C ~ 125°C (TJ)
Package / Case :
8-DIP (0.300",7.62mm)
Packaging :
Tube
Power - Max :
1.3W
Rds On (Max) @ Id,Vgs :
190 Ohm @ 10mA,10V
Series :
-
Supplier Device Package :
8-PDIP
Vgs(th) (Max) @ Id :
1.2V @ 250μA

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