LN100LA-G

Descripción :
MOSFET 2N-CH 1200V
Paquete :
6-LFGA (3x3)
Current - Continuous Drain (Id) @ 25°C :
-
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
FET Feature :
Standard
FET Type :
2 N-Channel (Cascoded)
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-25°C ~ 125°C (TJ)
Package / Case :
6-VFLGA
Packaging :
Tape & Reel (TR)
Power - Max :
350mW
Rds On (Max) @ Id,Vgs :
3000 Ohm @ 2mA,2.8V
Series :
-
Supplier Device Package :
6-LFGA (3x3)
Vgs(th) (Max) @ Id :
1.6V @ 10μA

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