EPC2111ENGRT

Current - Continuous Drain (Id) @ 25°C :

16A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

GaNFET (Gallium Nitride)

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 5V，5.7nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 15V，590pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Die

Packaging :

Cut Tape (CT)

Power - Max :

-

Rds On (Max) @ Id，Vgs :

19 mOhm @ 15A，5V，8 mOhm @ 15A，5V

Series :

-

Supplier Device Package :

Die

Vgs(th) (Max) @ Id :

2.5V @ 5mA