EPC2108

Current - Continuous Drain (Id) @ 25°C :

1.7A，500mA

Drain to Source Voltage (Vdss) :

60V，100V

FET Feature :

GaNFET (Gallium Nitride)

FET Type :

3 N-Channel (Half Bridge + Synchronous Bootstrap)

Gate Charge (Qg) (Max) @ Vgs :

0.22nC @ 5V，0.044nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

22pF @ 30V，7pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

9-VFBGA

Packaging :

-

Power - Max :

-

Rds On (Max) @ Id，Vgs :

190 mOhm @ 2.5A，5V，3.3 Ohm @ 2.5A，5V

Series :

eGaN

Supplier Device Package :

9-BGA (1.35x1.35)

Vgs(th) (Max) @ Id :

2.5V @ 100μA，2.5V @ 20μA