EPC2104ENGRT

Current - Continuous Drain (Id) @ 25°C :

23A

Drain to Source Voltage (Vdss) :

100V

FET Feature :

GaNFET (Gallium Nitride)

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Die

Packaging :

Cut Tape (CT)

Power - Max :

-

Rds On (Max) @ Id，Vgs :

6.3 mOhm @ 20A，5V

Series :

eGaN

Supplier Device Package :

Die

Vgs(th) (Max) @ Id :

2.5V @ 5.5mA