EPC2102ENGRT

Current - Continuous Drain (Id) @ 25°C :

23A (Tj)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

GaNFET (Gallium Nitride)

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Die

Packaging :

-

Power - Max :

-

Rds On (Max) @ Id，Vgs :

4.4 mOhm @ 20A，5V

Series :

eGaN

Supplier Device Package :

Die

Vgs(th) (Max) @ Id :

2.5V @ 7mA