Diodes Incorporated

DMC3016LSD-13

Descripción :
MOSFET N/P-CH 30V 8.2A/6.2A 8SO
Paquete :
8-SO
Current - Continuous Drain (Id) @ 25°C :
8.2A,6.2A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs :
25.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1415pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-SOIC (0.154",3.90mm Width)
Packaging :
Cut Tape (CT)
Power - Max :
1.2W
Rds On (Max) @ Id,Vgs :
16 mOhm @ 12A,10V
Series :
-
Supplier Device Package :
8-SO
Vgs(th) (Max) @ Id :
2.3V @ 250μA

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