Central Semiconductor Corp

CTLDM303N-M832DS TR

Descripción :
MOSFET 2N-CH 30V 3.6A TLM832DS
Paquete :
TLM832DS
Current - Continuous Drain (Id) @ 25°C :
3.6A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Standard
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
590pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-TDFN Exposed Pad
Packaging :
Tape & Reel (TR)
Power - Max :
1.65W
Rds On (Max) @ Id,Vgs :
40 mOhm @ 1.8A,4.5V
Series :
-
Supplier Device Package :
TLM832DS
Vgs(th) (Max) @ Id :
1.2V @ 250μA

Productos similares